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MC28

  

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GMC2875C [2.0" 5 X 7 DOT MATRIX DISPLAYS ]

other parts : GMA2875C  GMA2975C  GMA2475C  GMA2675C  GMC2975C  GMC2475C 

Fairchild
Fairchild Semiconductor


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GMC2888C [2.3 8X8 DOT MATRIX DISPLAYS ]

other parts : GMA2488C  GMA2888C  GMA2988C  GMC2488C  GMC2688C  GMC2988C 

Fairchild
Fairchild Semiconductor


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530MC289M000DG [CRYSTAL OSCILLATOR(XO) (10MHZ TO 1.4GHZ) ]

other parts : 530AA182M000DG  530AA455M000DG  530AA465M000DG  530AA59M0000DGR  530AA600M000DG  530AA607M000DG  530AA629M000DG 

Silabs
Silicon Laboratories

Description
The Si530/531 XO utilizes Silicon Laboratories’ advanced DSPLL® circuitry to provide a low jitter clock at high frequencies. The Si530/531 is available with any-rate output frequency from 10 to 945 MHz and select frequencies to 1400 MHz. Unlike a traditional XO, where a different crystal is required for each output frequency, the Si530/531 uses one fixed crystal to provide a wide range of output frequencies.

Features
Available with any-rate output frequencies from 10 MHz to 945 MHz and select frequencies to 1.4 GHz
3rd generation DSPLL® with superior jitter performance
3x better frequency stability than SAW-based oscillators
Internal fixed crystal frequency ensures high reliability and low aging
Available CMOS, LVPECL, LVDS, and CML outputs
3.3, 2.5, and 1.8 V supply options
Industry-standard 5 x 7 mm package and pinout
Pb-free/RoHS-compliant

Applications
SONET/SDH
Networking
SD/HD video
Test and measurement
Clock and data recovery
FPGA/ASIC clock generation

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GMC2875C [2.0" 5 X 7 DOT MATRIX DISPLAYS ]

other parts : GMA2475C  GMA2675C  GMA2875C  GMA2975C  GMC2475C  GMC2975C 

QT
QT Optoelectronics => Fairchildsemi

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GMC2888C [2.3 8X8 DOT MATRIX DISPLAYS ]

other parts : GMA2488C  GMA2888C  GMA2988C  GMC2988C  GMC2488C  GMC2688C 

QT
QT Optoelectronics => Fairchildsemi


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HMC282 [GaAs MMIC LOW NOISE AMPLIFIER, 36 - 40 GHz ] Hittite
Hittite Microwave

General Description
The HMC282 chip is a four stage GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of 36 to 40 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (2.30 mm2) size. The chip utilizes a GaAs PHEMT process offering 26 dB gain from a bias supply of +3.5V @ 90mA with a noise figure of 3.5 dB. All data is with the chip in a 50 ohm test fixture connected via ribbon bonds of minimal length. The HMC282 may be used in conjunction with HMC259 mixer to realize a millimeterwave system receiver.

Features
  Noise Figure: 3.5 dB
  Stable Gain vs. Temperature: 26 dB ± 1.2 dB
  Small Size: 1.11 mm x 2.07 mm
 
Typical Applications
The HMC282 LNA is ideal for:
   • Millimeterwave Point-to-Point Radios
   • VSAT
   • SATCOM

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1SMC28 [PLASTIC SURFASE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 1500W PEAK POWER 5.0 WATTS STEADY STATE ]

other parts : 1SMC10  1SMC100  1SMC100A  1SMC10A  1SMC11  1SMC110  1SMC110A 

Motorola
Motorola => Freescale
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HMC284MS8G [SPDT NON-REFLECTIVE SWITCH, DC - 3.5 GHz ]

other parts : HMC284MS8GE 

Hittite
Hittite Microwave

General Description
The HMC284MS8G & HMC284MS8GE are low-cost SPDT switches in 8-lead grounded base MSOP packages. The design has been optimized to provide high isolation with minimal insertion loss for medium and low power applications. On-chip circuitry allows positive voltage control operation at very low DC currents with control inputs compatible with CMOS and most TTL logic families. In the “OFF” state, RF1 and RF2 are non-refl ective. See refl ective high isolation SPDT version, HMC194MS8.

Features
High Isolation: >45 dB
Positive control: 0/+5V
Non-Refl ective Design
Ultra Small Pakcage: MSOP8G
Indluded in the HMC-DK005 Designers’ Kit

 

Typical Applications
The HMC284MS8G / HMC284MS8GE is ideal for:
• Cellular/PCS Base Stations
• 2.4 GHz ISM
• 3.5 GHz Wireless Local Loop

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HMC283 [GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz ] Hittite
Hittite Microwave

General Description
The HMC283 chip is a four stage GaAs MMIC Medium Power Amplifi er (MPA) which covers the frequency range of 17 to 40 GHz. The chip can easily be inte grated into Multi-Chip Modules (MCMs) due to its small size. The chip utilizes a GaAs PHEMT process offering 21 dB gain and +21 dBm output power from a bias supply of +3.5V @ 300 mA. The HMC283 may be used as a frequency doubler. A B.I.T. (Built-In-Test) pad (Vdet) allows monitoring microwave output power. All data is with the chip in a 50 ohm test fi xture connected via 0.076 x 0.0127mm (3mil x 0.5mil) ribbon bonds of minimal length 0.31mm (<12mils).

Features
High Gain: 21 dB
Psat Output Power: +21 dBm
Wideband Performance: 17 - 40 GHz
Small Chip Size: 1.72 x 0.88 x 0.1 mm

Typical Applications
The HMC283 is ideal for:
• Millimeterwave Point-to-Point Radios
• VSAT
• SATCOM

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1SMC28CA [SURFACE MOUNT BI-DIRECTIONAL GLASS PASSIVATED JUNCTION SILICON TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 5.0 THRU 170 VOLTS ]

other parts : 1SMC100CA  1SMC10CA  1SMC110CA  1SMC11CA  1SMC120CA  1SMC12CA  1SMC130CA 

Central-Semiconductor
Central Semiconductor

DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1SMC5.0CA Series types are Surface Mount Bi-Directional Glass Passivated Junction Transient Voltage Suppressors designed to protect voltage sensitive components from high voltage transients.

THIS DEVICE IS MANUFACTURED WITH A GLASS PASSIVATED CHIP FOR OPTIMUM RELIABILITY.
Note: For Uni-directional devices, please refer to the 1SMC5.0A Series data sheet.

MARKING CODE: SEE ELECTRICAL CHARACTERISTICS TABLE

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