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MC283

  

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HMC283 [GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz ] Hittite
Hittite Microwave

General Description
The HMC283 chip is a four stage GaAs MMIC Medium Power Amplifi er (MPA) which covers the frequency range of 17 to 40 GHz. The chip can easily be inte grated into Multi-Chip Modules (MCMs) due to its small size. The chip utilizes a GaAs PHEMT process offering 21 dB gain and +21 dBm output power from a bias supply of +3.5V @ 300 mA. The HMC283 may be used as a frequency doubler. A B.I.T. (Built-In-Test) pad (Vdet) allows monitoring microwave output power. All data is with the chip in a 50 ohm test fi xture connected via 0.076 x 0.0127mm (3mil x 0.5mil) ribbon bonds of minimal length 0.31mm (<12mils).

Features
High Gain: 21 dB
Psat Output Power: +21 dBm
Wideband Performance: 17 - 40 GHz
Small Chip Size: 1.72 x 0.88 x 0.1 mm

Typical Applications
The HMC283 is ideal for:
• Millimeterwave Point-to-Point Radios
• VSAT
• SATCOM

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HMC283LM1 [SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz ] Hittite
Hittite Microwave

General Description
The HMC283LM1 is a Medium Power Amplifi er (MPA) in a SMT leadless chip carrier package covering 17 to 40 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match preserving MMIC chip performance. Utilizing a GaAs PHEMT process, the device offers 20 dB gain and +21 dBm ouput power from a bias supply of +3.5V @ 300mA. As an alternative to chip-and-wire hybrid assemblies the HMC283LM1 eliminates the need for wirebonding, thereby providing a consistent connection interface for the customer. The amplifi er may be used as a frequency doubler. A built-in-test pad (Vdet) allows monitoring of microwave output power. All data is with the non-hermetic, epoxy sealed LM1 packaged MPA device mounted in a 50 ohm test fixture.

Features
SMT mmWave Package
Psat Output Power: +21 dBm
High Gain: 21 dB
No External Matching Required

Typical Applications
The HMC283LM1 is ideal for:
• Millimeterwave Point-to-Point Radios
• LMDS
• SATCOM

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