N05L

  

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End *4N05L *6N05L *5N05L *0N05L *2N05L *1N05L *3N05L *8N05L *7N05L
Included *7N05L* *2N05L* *0N05L* *1N05L* *5N05L* *6N05L* *4N05L*

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STD12N05L-1 [N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ]

other parts : STD12N05L  STD12N06L  STD12N06L-1  STD12N05LT4  STD12N06LT4 

ST-Microelectronics
STMicroelectronics

■ TYPICAL RDS(on) = 0.115 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175°C OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED

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RFD14N05LSM [14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs ]

other parts : RFD14N05L  RFD14N05LSM9A  RFP14N05L  14N05L  F14N05L 

Fairchild
Fairchild Semiconductor

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V

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RFD16N05LSM [16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs ] Fairchild
Fairchild Semiconductor

directly from logic circuit supply voltages. 5V range, thereby facilitating true on-off power control provides full rated conductance at gate biases in the 3V to accomplished through a special gate oxide design which switches for bipolar transistors. This performance is
switching converters, motor relay drivers and emitter such as programmable controllers, switching regulators, These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which

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STD17N05LT4 [N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ]

other parts : STD17N05L  STD17N05L-1  STD17N06L  STD17N06L-1  STD17N06LT4 

ST-Microelectronics
STMicroelectronics

■ TYPICAL RDS(on) = 0.065 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX

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RFD14N05LSM9A [14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs ]

other parts : RFD14N05L  RFD14N05LSM  RFP14N05L  14N05L  F14N05L 

Fairchild
Fairchild Semiconductor

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V

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STD17N05L-1 [N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ]

other parts : STD17N05L  STD17N05LT4  STD17N06L  STD17N06L-1  STD17N06LT4 

ST-Microelectronics
STMicroelectronics

■ TYPICAL RDS(on) = 0.065 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX

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STD12N05LT4 [N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ]

other parts : STD12N05L  STD12N06L  STD12N05L-1  STD12N06L-1  STD12N06LT4 

ST-Microelectronics
STMicroelectronics

■ TYPICAL RDS(on) = 0.115 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175°C OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED

View
STP15N05LFI [N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ]

other parts : STD12N05  STD12N06  STD3N30-1  STD3N30L-1  STH6N100  STH6N100FI  STK22N05 

ST-Microelectronics
STMicroelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.045Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING

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60N05L-TA3-T [60A, 50V N-CHANNEL POWER MOSFET ]

other parts : 60N05  60N05G-TA3-T 

UTC
Unisonic Technologies

DESCRIPTION
The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 60N05 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc.  

FEATURES
* RDS(ON)=12mΩ@ VGS=10V,ID=30A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 130nC)

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STP36N05LFI [N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ]

other parts : STD12N05  STD12N06  STD3N30-1  STD3N30L-1  STH6N100  STH6N100FI  STK22N05 

ST-Microelectronics
STMicroelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.045Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING

View
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