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N05L

  

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RFG50N05L [50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs ]

other parts : RFP50N05L  RFP50N05L9A 

Fairchild
Fairchild Semiconductor

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.

Features
• 50A, 50V
• rDS(ON) = 0.022Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

View
RFP50N05L [50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs ]

other parts : RFG50N05L  RFP50N05L9A 

Fairchild
Fairchild Semiconductor

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.

Features
• 50A, 50V
• rDS(ON) = 0.022Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

View
RFG50N05L [50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs ]

other parts : RFP50N05L  RFP50N05L9A 

Intersil
Intersil

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.

Features
• 50A, 50V
• rDS(ON) = 0.022Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

View
RFP50N05L [50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs ]

other parts : RFG50N05L  RFP50N05L9A 

Intersil
Intersil

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.

Features
• 50A, 50V
• rDS(ON) = 0.022Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

View
STP15N05L [N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ]

other parts : STD12N05  STD12N06  STD3N30-1  STD3N30L-1  STH6N100  STH6N100FI  STK22N05  STK2N80  STP15N05LFI  STP15N06L 

ST-Microelectronics
STMicroelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.045Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

View
STP36N05L [N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ]

other parts : STD12N05  STD12N06  STD3N30-1  STD3N30L-1  STH6N100  STH6N100FI  STK22N05  STK2N80  STP15N05L  STP15N05LFI 

ST-Microelectronics
STMicroelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.045Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

View
SPD13N05L [SIPMOS® Power Transistor ]

other parts : Q67040-S4115-A2  Q67040-S4123  SPD14N05  SPD21N05L  SPD23N05L  SPD28N05L  SPD31N05  SPU13N05L  SPU14N05  SPU23N05L 

Infineon
Infineon Technologies

SIPMOSPower Transistor

Features
•N channel
•Enhancement mode
•Avalanche rated
•dv/dtrated
•175˚C operating temperature

View
SPD21N05L [SIPMOS® Power Transistor ]

other parts : Q67040-S4115-A2  Q67040-S4123  SPD13N05L  SPD14N05  SPD23N05L  SPD28N05L  SPD31N05  SPU13N05L  SPU14N05  SPU23N05L 

Infineon
Infineon Technologies

SIPMOSPower Transistor

Features
•N channel
•Enhancement mode
•Avalanche rated
•dv/dtrated
•175˚C operating temperature

View
SPD23N05L [SIPMOS® Power Transistor ]

other parts : Q67040-S4115-A2  Q67040-S4123  SPD13N05L  SPD14N05  SPD21N05L  SPD28N05L  SPD31N05  SPU13N05L  SPU14N05  SPU23N05L 

Infineon
Infineon Technologies

SIPMOSPower Transistor

Features
•N channel
•Enhancement mode
•Avalanche rated
•dv/dtrated
•175˚C operating temperature

View
SPD28N05L [SIPMOS® Power Transistor ]

other parts : Q67040-S4115-A2  Q67040-S4123  SPD13N05L  SPD14N05  SPD21N05L  SPD23N05L  SPD31N05  SPU13N05L  SPU14N05  SPU23N05L 

Infineon
Infineon Technologies

SIPMOSPower Transistor

Features
•N channel
•Enhancement mode
•Avalanche rated
•dv/dtrated
•175˚C operating temperature

View
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