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N05L

  

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Manufacturer Part no Description View
Fairchild
Fairchild Semiconductor
RFD16N05LSM 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

directly from logic circuit supply voltages. 5V range, thereby facilitating true on-off power control provides full rated conductance at gate biases in the 3V to accomplished through a special gate oxide design which switches for bipolar transistors. This performance is
switching converters, motor relay drivers and emitter such as programmable controllers, switching regulators, These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which

ST-Microelectronics
STMicroelectronics
STD17N05LT4 N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.065 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX


other parts : STD17N05L STD17N05L-1 STD17N06L STD17N06L-1 STD17N06LT4 
Fairchild
Fairchild Semiconductor
RFD14N05LSM9A 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V


other parts : RFD14N05L RFD14N05LSM RFP14N05L 14N05L F14N05L 
ST-Microelectronics
STMicroelectronics
STD17N05L-1 N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.065 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX


other parts : STD17N05L STD17N05LT4 STD17N06L STD17N06L-1 STD17N06LT4 
ST-Microelectronics
STMicroelectronics
STD12N05LT4 N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.115 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175°C OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED


other parts : STD12N05L STD12N06L STD12N05L-1 STD12N06L-1 STD12N06LT4 
ST-Microelectronics
STMicroelectronics
STD12N05L-1 N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.115 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175°C OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED


other parts : STD12N05L STD12N06L STD12N06L-1 STD12N05LT4 STD12N06LT4 
Fairchild
Fairchild Semiconductor
RFD14N05LSM 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V


other parts : RFD14N05L RFD14N05LSM9A RFP14N05L 14N05L F14N05L 
ST-Microelectronics
STMicroelectronics
STP15N05LFI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.045Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING


other parts : STD12N05 STD12N06 STD3N30-1 STD3N30L-1 STH6N100 STH6N100FI STK22N05 STK2N80 STP15N05L STP15N06L 
UTC
Unisonic Technologies
60N05L-TA3-T 60A, 50V N-CHANNEL POWER MOSFET

DESCRIPTION
The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 60N05 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc.  

FEATURES
* RDS(ON)=12mΩ@ VGS=10V,ID=30A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 130nC)


other parts : 60N05 60N05G-TA3-T 
ST-Microelectronics
STMicroelectronics
STP36N05LFI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.045Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING


other parts : STD12N05 STD12N06 STD3N30-1 STD3N30L-1 STH6N100 STH6N100FI STK22N05 STK2N80 STP15N05L STP15N05LFI 

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