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NTE17

  

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Match, Like NTE17 NTE170 NTE171 NTE175 NTE176 NTE177 NTE179
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Manufacturer Part no Description View
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE17 Integrated Circuit TV Tuner Band Selector
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE17 Silicon complementary PNP transistor. Low noise, general purpose amplifier.
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE176 Germaniun PNP Transistor Audio Power Amplifier
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE175 Silicon Complementary Transistors High Voltage, Medium Power Switch

Description:
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.


other parts : NTE38 
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE177 General Purpose Silicon Rectifier

Description:
The NTE177 is a general purpose silicon rectifier in a DO35 case designed for switching applications.

 

NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE179 Germanium PNP Transistor Audio Power Amplifier, High Current Switch

Description:
The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating conditions.

Features:
• Low Collector–Emitter Saturation Voltage:
   VCE(sat) = 0.5V (Max) @ IC = 5A

 

NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE170 Single Phase Bridge Rectifier 2.0 Amp

Features:
• Ideal for Printed Circuit Board
• Surge Overload Rating: 50A (Peak)

 


other parts : NTE166 NTE167 NTE168 NTE169 
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE171 Silicon NPN Transistor Audio/Video Amplifier

Description:
The NTE171 is a silicon NPN transistor in a TO202 type case designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators.

Features:
• High Collector–Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @ IC = 1mA
• Low Collector–Base Capacitance: Ccb = 3pF Max @ VCB = 20V

 

NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE177 General Purpose Silicon Rectif
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE179 Germanium PNP Transistor Audio

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