Silicon Complementary Transistors High Voltage, Medium Power Switch
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
Germanium PNP Transistor Audio Power Amplifier, High Current Switch
The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating conditions.
The NTE171 is a silicon NPN transistor in a TO202 type case designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators.
• High Collector–Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @ IC = 1mA
• Low Collector–Base Capacitance: Ccb = 3pF Max @ VCB = 20V