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BS62LV256PI70 [VeryLow Power CMOS SRAM 32K X 8 bit ]

other parts : BS62LV256  BS62LV256DC55  BS62LV256DC70  BS62LV256DCG55  BS62LV256DCG70  BS62LV256DCP55  BS62LV256DCP70 

BSI
Brilliance Semiconductor

DESCRIPTION
TheBS62L V256 is a high performance,very low power CMOS Static Random  Access  Memory  organized  as  32,768  by  8  bits  and operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced  CMOS  technology  and  circuit  techniques  provide  both high  speed  and  low  power  features  with  typical  CMOS  standby current  of  0.01uA  and  maximum  access  time  of  70ns  in  3.0V operation.

FEATURES
Wide VCC operation voltage : 2.4V ~ 5.5V
Very low powerconsumption:
    VCC = 3.0V  Operationcurrent :  25mA (Max.)  at 70ns
                                               1mA (Max.)  at 1MHz
                     Standby current :  0.01uA(Typ.) at 25OC
   VCC = 5.0V  Operationcurrent :  40mA (Max.)  at 55ns
                                              2mA (Max.)  at 1MHz
                     Standby current :  0.4uA (Typ.)  at 25OC
Highspeed access time:
  -55  55ns(Max.) at VCC: 4.5~5.5V
  -70  70ns(Max.) at VCC: 3.0~5.5V
Automatic power down whenchip is deselected
Easy expansion with CE and OE options
Threestate outputs and TTLcompatible
Fully static operation
Data retentionsupply voltage as low as 1.5V

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BS62LV1028PI70 [Very Low Power/Voltage CMOS SRAM 128K X 8 bit ]

other parts : BS62LV1028  BS62LV1028DC  BS62LV1028DC55  BS62LV1028DC70  BS62LV1028DCG55  BS62LV1028DCG70  BS62LV1028DCP55 

BSI
Brilliance Semiconductor

DESCRIPTION
The BS62LV1028 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA at 3V/25oC and maximum access time of 55ns at 3V/85°C.
Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62LV1028 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV1028 is available in DICE form , JEDEC standard 32 pin 450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4 mm STSOP and 8mmx20mm TSOP.

FEATURES
• Wide Vcc operation voltage : 2.4V ~ 3.6V
• Very low power consumption :
   Vcc = 3.0V C-grade : 17mA (@55ns) operating current
                  I- grade : 18mA (@55ns) operating current
                  C-grade : 14mA (@70ns) operating current
                  I- grade : 15mA (@70ns) operating current
                  0.1uA (Typ.) CMOS standby current
• High speed access time :
   -55 55ns
   -70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options

 

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CS18LV02565API70 [High Speed Super Low Power SRAM ]

other parts : CS18LV02565  CS18LV02565AAC-55  CS18LV02565AAC-70  CS18LV02565AAC55  CS18LV02565AAC70  CS18LV02565AACR55  CS18LV02565AACR70 

ETC1
Unspecified

[CHIPLUS]

GENERAL DESCRIPTION
The CS18LV02565 is a high performance, high speed and super low power CMOS Static Random Access Memory organized as 32,768 words by 8bits and operates for a single 4.5 to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed, super low power features and maximum access time of 55/70ns in 5.0V operation. Easy memory expansion is provided by an active LOW chip enable (/CE) and active LOW output enable (/OE).

FEATURES
Wide operation voltage : 4.5 ~ 5.5V
Ultra low power consumption : 2mA@1MHz (Max.) , Vcc=5.0V.
                                          1.0 uA (Typ.) CMOS standby current
High speed access time : 55/70ns.
Automatic power down when chip is deselected.
Three state outputs and TTL compatible.
Data retention supply voltage as low as 1.5V.
Easy expansion with /CE and /OE options.

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BS62LV1600PI70 [Very Low Power CMOS SRAM 2M X 8 bit ]

other parts : BS62LV1600  BS62LV1600EC  BS62LV1600EC-55  BS62LV1600EC-70  BS62LV1600ECG55  BS62LV1600ECG70  BS62LV1600ECP55 

BSI
Brilliance Semiconductor

DESCRIPTION
The BS62LV1600 is a high performance, very low power CMOS Static Random Access Memory organized as 2048K by 8 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 1.5uA at 3.0V/25OC and maximum access time of 55ns at 3.0V/85OC.

FEATURES
Wide VCC operation voltage : 2.4V ~ 5.5V
Very low power consumption :
      VCC = 3.0V Operation current : 46mA (Max.)at 55ns
                                              2mA (Max.)at 1MHz
                       Standby current : 1.5uA (Typ.) at 25 OC
      VCC = 5.0V Operation current : 115mA (Max.)at 55ns
                                              10mA (Max.)at 1MHz
                        Standby current : 6.0uA (Typ.) at 25OC
High speed access time :
   -55 55ns (Max.) at VCC : 3.0~5.5V
   -70 70ns (Max.) at VCC : 2.7~5.5V
Automatic power down when chip is deselected
Easy expansion with CE1, CE2 and OE options
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V

 

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CS18LV02565PI70 [High Speed Super Low Power SRAM ]

other parts : CS18LV02565  CS18LV02565AAC-55  CS18LV02565AAC-70  CS18LV02565AAC55  CS18LV02565AAC70  CS18LV02565AACR55  CS18LV02565AACR70 

ETC1
Unspecified

[CHIPLUS]

GENERAL DESCRIPTION
The CS18LV02565 is a high performance, high speed and super low power CMOS Static Random Access Memory organized as 32,768 words by 8bits and operates for a single 4.5 to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed, super low power features and maximum access time of 55/70ns in 5.0V operation. Easy memory expansion is provided by an active LOW chip enable (/CE) and active LOW output enable (/OE).

FEATURES
Wide operation voltage : 4.5 ~ 5.5V
Ultra low power consumption : 2mA@1MHz (Max.) , Vcc=5.0V.
                                          1.0 uA (Typ.) CMOS standby current
High speed access time : 55/70ns.
Automatic power down when chip is deselected.
Three state outputs and TTL compatible.
Data retention supply voltage as low as 1.5V.
Easy expansion with /CE and /OE options.

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BS62LV1027PI70 [Very Low Power CMOS SRAM 128K X 8 bit ]

other parts : BS62LV1027  BS62LV1027DC  BS62LV1027DC55  BS62LV1027DC70  BS62LV1027DCG55  BS62LV1027DCG70  BS62LV1027DCP55 

BSI
Brilliance Semiconductor

DESCRIPTION
The BS62LV1027 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 by 8 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.02uA at 3.0V/25OC and maximum access time of 55ns at 3.0V/85OC.

FEATURES
 Wide VCC operation voltage : 2.4V ~ 5.5V
 Very low power consumption :
      VCC = 3.0V Operation current : 18mA (Max.) at 55ns
                                                2mA (Max.) at 1MHz
                      Standby current : 0.02uA (Typ.)at 25 OC
      VCC = 5.0V Operation current : 47mA (Max.) at 55ns
                                               10mA (Max.) at 1MHz
                      Standby current : 0.4uA (Typ.) at 25OC
 High speed access time :
   -55 55ns (Max.) at VCC : 3.0~5.5V
   -70 70ns (Max.) at VCC : 2.7~5.5V
 Automatic power down when chip is deselected
 Easy expansion with CE2, CE1 and OE options
 Three state outputs and TTL compatible
 Fully static operation
 Data retention supply voltage as low as 1.5V

 

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BS62LV4007PI70 [Very Low Power/Voltage CMOS SRAM 512K X 8 bit ]

other parts : BS62LV4007  BS62LV4007EC  BS62LV4007EC-55  BS62LV4007EC-70  BS62LV4007EC55  BS62LV4007EC70  BS62LV4007ECG55 

BSI
Brilliance Semiconductor

DESCRIPTION
The BS62LV4007 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 2.0uA at 5.0V/25oC and maximum access time of 55ns at 5.0V/85oC.

FEATURES
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
   Vcc = 5.0V C-grade: 68mA (@55ns) operating current
                   I -grade: 70mA (@55ns) operating current
                   C-grade: 58mA (@70ns) operating current
                   I -grade: 60mA (@70ns) operating current
                   2.0uA (Typ.) CMOS standby current
• High speed access time :
   -55 55ns
   -70 70ns
• Automatic power down when chip is deselected
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• Three state outputs and TTL compatible

 

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BS62LV4006PI70 [Low Power/Voltage CMOS SRAM 512K X 8 bit ] BSI
Brilliance Semiconductor
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