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PT5010JVRU3

  

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APT5014B2VR [500V 37A 0.140Ω POWER MOS V® ] APT
Advanced Power Technology

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• New T-MAX™ Package
   (Clip-mounted TO-247 Package)

 

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APT50M50JVR [POWER MOS V® 500V 77A 0.050Ω ] APT
Advanced Power Technology

POWER MOS V® 500V 77A 0.050Ω

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.

• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular SOT-227 Package

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APT5014BFLL [POWER MOS 7™ FREDFET (500V 35A 0.140Ω) ]

other parts : APT5014  APT5014SFLL 

APT
Advanced Power Technology

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7™ combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE

 

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APT5014BLL [POWER MOS 7™ (500V 35A 0.140Ω) ]

other parts : APT5014SLL 

APT
Advanced Power Technology

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D3PAK Package

 

View
APT50M50L2FLL [POWER MOS 7™ 500V 89A 0.050Ω ] APT
Advanced Power Technology

POWER MOS 7™ 500V 89A 0.050Ω

Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg 
 • Increased Power Dissipation
 • Easier To Drive
 • Popular TO-264 MAXPackage

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APT5014LLC [500V 37A 0.140Ω POWER MOS VI ]

other parts : APT5014B2LC 

APT
Advanced Power Technology

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds.

• Identical Specifications: T-MAX™ or TO-264 Package
• Lower Gate Charge & Capacitance
• Easier To Drive
• 100% Avalanche Tested
• Faster switching

 

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APT5014LVFR [POWER MOS V® FREDFET (500V 37A 0.140Ω) ]

other parts : APT5014B2VFR 

APT
Advanced Power Technology

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

• T-MAX™ or TO-264 Package
• Avalanche Energy Rated
• Faster Switching •
• Lower Leakage
• FAST RECOVERY BODY DIODE

 

View
APT5014LVR [500V 37A 0.140Ω POWER MOS V® ] APT
Advanced Power Technology

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

• Faster Switching
• 100% Avalanche Tested

• Lower Leakage
• Popular TO-264 Package

View
APT5014SFLL [POWER MOS 7™ FREDFET (500V 35A 0.140Ω) ]

other parts : APT5014  APT5014BFLL 

APT
Advanced Power Technology

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7™ combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE

 

View
APT5014SLL [POWER MOS 7™ (500V 35A 0.140Ω) ]

other parts : APT5014BLL 

APT
Advanced Power Technology

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D3PAK Package

 

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