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SC4520

  

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UL635H256BSC45 [Low Voltage PowerStore32K x 8 nvSRAM ]

other parts : UL634H256BSC45  UL634H256BSC55  UL634H256BSK45  UL634H256BSK55  UL634H256BTC45  UL634H256BTC55  UL634H256BTK45  UL634H256BTK55  UL634H256SC45  UL634H256SC55 

Zentrum
Zentrum Mikroelektronik Dresden AG

Description
The UL635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.

Features
High-performance CMOS non-volatile static RAM 32768 x 8 bits
35 and 45 ns Access Times
15 and 20 ns Output Enable Access Times
ICC= 8 mA typ. at 200 ns Cycle Time
Automatic STORE to EEPROM on Power Down using external capacitor
Software initiated STORE
Automatic STORE Timing
106 STORE cycles to EEPROM
100 years data retention in EEPROM
Automatic RECALL on Power Up
Software RECALL Initiation
Unlimited RECALL cycles from EEPROM
Wide voltage range: 2.7 ... 3.6 V (3.0 ... 3.6 V for 35 ns type)
Operating temperature range:
  0 to 70 °C
  -40 to 85 °C
QS 9000 Quality Standard
ESD characterization according (MIL STD 883C M3015.7-HBM)
Package: SOP28 (330 mil)
 

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2SC4562 [Silicon NPN epitaxial planer type ]

other parts : 2SC4562Q  2SC4562R 

Panasonic
Panasonic Corporation

Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1748

■Features
● High transition frequency fT.
● Small collector output capacitance Cob
● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

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UL635H256SC45 [Low Voltage PowerStore32K x 8 nvSRAM ]

other parts : UL634H256BSC45  UL634H256BSC55  UL634H256BSK45  UL634H256BSK55  UL634H256BTC45  UL634H256BTC55  UL634H256BTK45  UL634H256BTK55  UL634H256SC45  UL634H256SC55 

Zentrum
Zentrum Mikroelektronik Dresden AG

Description
The UL635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.

Features
High-performance CMOS non-volatile static RAM 32768 x 8 bits
35 and 45 ns Access Times
15 and 20 ns Output Enable Access Times
ICC= 8 mA typ. at 200 ns Cycle Time
Automatic STORE to EEPROM on Power Down using external capacitor
Software initiated STORE
Automatic STORE Timing
106 STORE cycles to EEPROM
100 years data retention in EEPROM
Automatic RECALL on Power Up
Software RECALL Initiation
Unlimited RECALL cycles from EEPROM
Wide voltage range: 2.7 ... 3.6 V (3.0 ... 3.6 V for 35 ns type)
Operating temperature range:
  0 to 70 °C
  -40 to 85 °C
QS 9000 Quality Standard
ESD characterization according (MIL STD 883C M3015.7-HBM)
Package: SOP28 (330 mil)
 

View
2SC4562 [Silicon NPN Epitaxial Planar Type ]

other parts : 2SC4562Q  2SC4562R 

Kexin
KEXIN Industrial

Silicon NPN Epitaxial Planar Type

Features
High transition frequency fT.
Small collector output capacitance cob.

View
UL631H256BSC45 [Low voltage softstore 32K x 8 nvSRAM ]

other parts : UL631H256  UL631H256BSC55  UL631H256BSK45  UL631H256BTC45  UL631H256BTC55  UL631H256BTK45  UL631H256BTK55  UL631H256S2C35  UL631H256S2C35G  UL631H256S2C45 

Zentrum
Zentrum Mikroelektronik Dresden AG

Description
The UL631H256 has two separate modes of operation: SRAM mode and nonvolatile mode.In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disab
led

View
2SC4562 [Silicon NPN Epitaxial Planar Type ]

other parts : 2SC4562Q  2SC4562R 

Twtysemi
TY Semiconductor

Silicon NPN Epitaxial Planar Type

Features
High transition frequency fT.
Small collector output capacitance cob.

View
UL631H256SC45 [Low voltage softstore 32K x 8 nvSRAM ]

other parts : UL631H256  UL631H256BSC45  UL631H256BSC55  UL631H256BSK45  UL631H256BTC45  UL631H256BTC55  UL631H256BTK45  UL631H256BTK55  UL631H256S2C35  UL631H256S2C35G 

Zentrum
Zentrum Mikroelektronik Dresden AG

Description
The UL631H256 has two separate modes of operation: SRAM mode and nonvolatile mode.In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disab
led

View
2SC4562Q [Silicon NPN epitaxial planer type ]

other parts : 2SC4562  2SC4562R 

Panasonic
Panasonic Corporation

Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1748

■Features
● High transition frequency fT.
● Small collector output capacitance Cob
● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

View
WSC4527 [Wirewound Resistors, Precision Power, Surface Mount - WSC, WSN ]

other parts : WSC-1  WSC-1/2  WSC-2  WSC0001  WSC0002  WSC01/2  WSC2515  WSC2515R7000FEA  WSC4527-1-1  WSC6927 

Vishay
Vishay Semiconductors

FEATURES
• All welded construction
• Molded encapsulation
• Wraparound terminations
• Excellent stability at different environmenta conditions
• High power ratings (up to 3 W)
• Superior surge capability
• Available in non-inductive styles with Ayrton Perry winding (WSN in lieu of WSC, maximum resistance is one-half WSC range)
• AEC-Q200 qualified available

View
2SC4562Q [Silicon NPN Epitaxial Planar Type ]

other parts : 2SC4562  2SC4562R 

Kexin
KEXIN Industrial

Silicon NPN Epitaxial Planar Type

Features
High transition frequency fT.
Small collector output capacitance cob.

View
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