Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site


SDA2

  

Datasheet

Match, Like SDA20
Start with SDA20* SDA21* SDA23* SDA24* SDA25* SDA26* SDA27* SDA29* SDA2C* SDA2D*
End *ESDA2
Included N/A
View Details    
SDA20 [Optically Coupled Module ] BOT
Bedford Opto Technology Ltd.
View
SDA267 [10 AMP RECITIFIER ASSEMBLY ]

other parts : SDA267A  SDA267B  SDA267C  SDA267D  SDA267E  SDA267F  SDA267G 

SSDI
Solid State Devices, Inc.
View
SDA276 [ULTRA FAST RECOVERY SINGLE PHASE BRIDGE ASSEMBLY ] SSDI
Solid State Devices, Inc.
View
SDA294 [ULTRA FAST RECOVERY SINGLE PHASE BRIDGE ASSEMBLY ] SSDI
Solid State Devices, Inc.
View
SDA234 [(SDA2500F - SDA25000F) FAST RECOVERY RECTIFIER ASSEMBLY ] SSDI
Solid State Devices, Inc.
View
SDA2516 [Nonvolatile Memory 1-Kbit E2PROM ]

other parts : Q67100-H5092  SDA2516-5 

Infineon
Infineon Technologies

Features
● Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology (E2PROM)
● 128 × 8-bit organization
● Supply voltage 5 V
● Serial 2-line bus for data input and output (I2C Bus)
● Reprogramming mode, 10 ms erase/write cycle
● Reprogramming by means of on-chip control (without external control)
● Check for end of programming process
● Data retention > 10 years
● More than 104 reprogramming cycles per address
● Compatible with SDA 2516. Exception:
   Conditions for total erase and current consumption ICC.

 

View
SDA2516 [Nonvolatile Memory 1-Kbit E2PROM ]

other parts : Q67100-H5092  SDA2516-5 

Siemens
Siemens AG

Features
● Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology (E2PROM)
● 128 × 8-bit organization
● Supply voltage 5 V
● Serial 2-line bus for data input and output (I2C Bus)
● Reprogramming mode, 10 ms erase/write cycle
● Reprogramming by means of on-chip control (without external control)
● Check for end of programming process
● Data retention > 10 years
● More than 104 reprogramming cycles per address
● Compatible with SDA 2516. Exception:
   Conditions for total erase and current consumption ICC.

TPS65023B
TPS65023
TPS65023RSBR
TPS65023RSBT
TPS65023RSBRG4
TPS65023RSBTG4
TPS65023BRSBR
TPS65023BRSBT
Description
The TPS65023-Q1 device is an integrated power management integrated circuit (IC) for applications powered by one Li-Ion or Li-Polymer cell, which require multiple power rails. The TPS65023-Q1 device provides three highly efficient, step-down converters targeted at providing the core voltage, peripheral, input and output (I/O), and memory rails in a processor-based system. The core converter allows for on-the-fly voltage changes through a serial interface, allowing the system to implement dynamic power savings. All three step-down converters enter a low-power mode at light load for maximum efficiency across the widest possible range of load currents.

Features
• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
   – Device Temperature Grade 1: –40°C to 125°C
      Ambient Operating Temperature Range
   – Device HBM ESD Classification Level 2
   – Device CDM ESD Classification Level C4A (RHA Package) or C5 (RSB Package)
• 1.5 A, 90% Efficient Step-Down Converter for Processor Core (VDCDC1)
• 1.2 A, Up to 95% Efficient Step-Down Converter for System Voltage (VDCDC2)
• 1 A, 92% Efficient Step-Down Converter for Memory Voltage (VDCDC3)
• 30 mA LDO/Switch for Real Time Clock (VRTC)
• 2 × 200 mA General-Purpose Low Dropout (LDO)
• Dynamic Voltage Management for Processor Core
• Preselectable LDO Voltage Using Two Digital Input Pins
• Externally Adjustable Reset Delay Time
• Battery Backup Functionality
• Separate Enable Pins for Inductive Converters
• I2C-Compatible Serial Interface
• 85-μA Quiescent Current
• Low-Ripple Pulse-Frequency Modulation (PFM) Mode
• Thermal Shutdown Protection

Applications
• Automotive Clusters
• Automotive Infotainment Systems
• Digital Radios
• Supply DaVinci™ Digital Signal Processor (DSP) Family Solutions

 

View
SDA2526 [Nonvolatile Memory 2-Kbit E2PROM with I2C Bus ]

other parts : Q67100-H5095  SDA2526-5 

Siemens
Siemens AG

Features
●Word-organized programmable nonvolatile memory in n-channel floating-gate technology (E2PROM)
●256×8-bit organization
●Supply voltage 5 V
●Serial 2-line bus for data input and output (I2C Bus)
●Reprogramming mode, 10 ms erase/write cycle
●Reprogramming by means of on-chip control (without external control)
●Check for end of programming process
●Data retention > 10 years
 

View
SDA2025 [HIGH VOLTAGE STACKABLE RECTIFIER ASSEMBLY ]

other parts : SDA2026  SDA2027  SDA2028  SDA2029  SDA2030  SDA2031  SDA2032 

SSDI
Solid State Devices, Inc.

HIGH VOLTAGE STACKABLE RECTIFIER ASSEMBLY

View
SDA2026 [HIGH VOLTAGE STACKABLE RECTIFIER ASSEMBLY ]

other parts : SDA2025  SDA2027  SDA2028  SDA2029  SDA2030  SDA2031  SDA2032 

SSDI
Solid State Devices, Inc.

HIGH VOLTAGE STACKABLE RECTIFIER ASSEMBLY

View
1 2 3 4 5 6 7 8 9 10 Next
Share Link : 

HOME




Language : 한국어     日本語     русский     简体中文     español
@ 2015 - 2018  [ Home ][ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]