These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
· Q1: 6.5 A, 20 V. RDS(ON) = 30 mW @ VGS = 4.5 V
                       RDS(ON) = 43 mW @ VGS = 2.5 V.
· Q2: –5 A, –20 V, RDS(ON) = 55 mW @ VGS = –4.5 V
                       RDS(ON) = 90 mW @ VGS = –2.5 V