MFG CO.
Intersil
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Formerly developmental type TA17404.
Features
• 2.6A, 400V
• rDS(ON) = 2.500â¦
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Part Name
Description
PDF
MFG CO.
400V,2.6A N-Channel MOSFET ( Rev : 2011 )
Alpha and Omega Semiconductor
400V,2.6A N-Channel MOSFET
Alpha and Omega Semiconductor
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Siemens AG
1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET
New Jersey Semiconductor
0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
Fairchild Semiconductor
3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
New Jersey Semiconductor
10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET
Unisonic Technologies
20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET
Fairchild Semiconductor
Dual N-Channel, 20V, 2.6A, Power MOSFET
Will Semiconductor Ltd.