MFG CO.
Intersil
The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25â and 150â.
Features
• 40A, 600V at TC = 25â
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150â
• Short Circuit Rated
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Part Name
Description
PDF
MFG CO.
40A, 600V, UFS Series N-Channel IGBTs ( Rev : 2003 )
Fairchild Semiconductor
40A, 600V, UFS Series N-Channel IGBTs ( Rev : 2004 )
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40A, 600V, UFS Series N-Channel IGBTs
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40A, 600V, Rugged UFS Series N-Channel IGBTs
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27A, 600V, UFS Series N-Channel IGBTs ( Rev : 2003 )
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27A, 600V, UFS Series N-Channel IGBTs
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6A, 600V, UFS Series N-Channel IGBTs
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24A, 600V, UFS Series N-Channel IGBTs
Fairchild Semiconductor
14A, 600V, UFS Series N-Channel IGBTs
Fairchild Semiconductor