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N08L1618C2AB70I Datasheet - NanoAmp Solutions, Inc.

N08L1618C2AB70I Datasheet PDF NanoAmp Solutions, Inc.

Part Name
N08L1618C2AB70I

Other PDF
  not available.

page
10 Pages

File Size
178.6 kB

MFG CO.
NANOAMP
NanoAmp Solutions, Inc. NANOAMP

Overview
The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low power.

Features
• Single Wide Power Supply Range
  1.65 to 2.2 Volts
• Very low standby current
  0.5µA at 1.8V (Typical)
• Very low operating current
  1.0mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
  0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
  Dual Chip Enables (CE1and CE2)
  Byte control for independent byte operation
  Output Enable (OE) for memory expansion
• Low voltage data retention
   Vcc = 1.2V
• Very fast output enable access time
  25ns OEaccess time
• Very fast Page Mode access time
  tAAP = 25ns
• Automatic power down to standby mode
• TTL compatible three-state output driver

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
PDF
MFG CO.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
ON Semiconductor
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
ON Semiconductor
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
Unspecified
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit
AMI Semiconductor
512K x 16 8Mb Asynchronous SRAM
Giga Semiconductor
512K x 16 8Mb Asynchronous SRAM
Giga Semiconductor
4Mb Ultra-Low Power Asynchronous CMOS SRAM
Unspecified
Ultra Low Power 512k x 8 CMOS SRAM
G-Link Technology
Ultra Low Power 512k x 8 CMOS SRAM ( Rev : 2000 )
G-Link Technology
256K x 32 8Mb Asynchronous SRAM
Giga Semiconductor

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