Description:
Each isolator in this series has a 890 nm (for the 4N2_U series) and 935nm (for the 4N4_ series) wavelength infrared emitting diode and a NPN silicon phototransistor,which are mounted in a hermetically sealed Surface Mount, 6 Pin package. Devices are designed for military and/or harsh environments. Burn-in condition is VCE= 10V, IF= 40mA, PD= 275 mW, TA= 25° C.
The 4N22U, 4N23U and 4N24U (TX, TXV) devices are processed to MIL-PRF-19500/486. The 4N47U, 4N48U and 4N48U (TX, TXV) devices are processed to MIL-PRF-19500/548.

Features:
• Surface Mount (SM), Leadless Chip Carrier (LCC)
• 1 kV electrical isolation
• Base contact provided for conventional transistor biasing
• TX and TXV devices processed to MIL-PRF-19500

Applications:
• Military equipment
• High-Reliability environments
• High voltage isolation between input and output
• Electrical isolation in dirty environments
• Industrial equipment
• Medical equipment
• Office equipment