DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Sizeï” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.
â TYPICAL RDS(on) = 0.01 â¦
â EXCEPTIONAL dv/dt CAPABILITY
â 100% AVALANCHE TESTED
â APPLICATION ORIENTED CHARACTERIZATION
â FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
â ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
APPLICATIONS
â SOLENOID AND RELAY DRIVERS
â DC MOTOR CONTROL, AUDIO AMPLIFIERS
â DC-DC CONVERTERS
â AUTOMOTIVE ENVIRONMENT
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