Description
The device is an N-channel FDmesh⢠II Power MOSFET that belongs to the second generation of MDmesh⢠technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
Features
â The worldwide best RDS(on)* area amongst the
fast recovery diode devices
â 100% avalanche tested
â Low input capacitance and gate charge
â Low gate input resistance
â Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
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