N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
â TYPICAL RDS(on)= 0.25 â¦
â AVALANCHE RUGGED TECHNOLOGY
â 100% AVALANCHE TESTED
â REPETITIVE AVALANCHE DATA AT 100°C
â LOW INPUT CAPACITANCE
â LOW GATE CHARGE
â HIGH CURRENT CAPABILITY
â 175°C OPEARTING TEMPERATURE
â APPLICATION ORIENTED CHARACTERIZATION
â THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1")
â SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
APPLICATIONS
â HIGH CURRENT, HIGH SPEED SWITCHING
â SOLENOID AND RELAY DRIVERS
â REGULATORS
â DC-DC & DC-AC CONVERTERS
â MOTOR CONTROL, AUDIO AMPLIFIERS
â AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
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