DESCRIPTION
This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a remark
able manufacturing reproducibility.
â TYPICAL RDS(on)= 0.032â¦
â EXCEPTIONAL dv/dt CAPABILITY
â 100% AVALANCHE TESTED
â LOW GATE CHARGE 100°C
â APPLICATION ORIENTED CHARACTERIZATION
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