Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area metalâtoâsilicon power diode. Stateâofâtheâart geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in lowâvoltage, highâfrequency inverters, free wheeling diodes, and polarity protection diodes.
Features
⢠Extremely Low VF
⢠Low Stored Charge, Majority Carrier Conduction
⢠Low Power Loss/High Efficiency
⢠These are PbâFree Devices*
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