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28F256L18 Datasheet - Intel

28F256L18 Datasheet PDF Intel

Part Name
28F256L18

Other PDF
  not available.

page
106 Pages

File Size
1.2 MB

MFG CO.
Intel
Intel Intel

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (MLC) technology.

Product Features
■ High performance Read-While-Write/Erase
  — 85 ns initial access
  — 54 MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode
  — 25 ns asynchronous-page mode
  — 4-, 8-, 16-, and continuous-word burst mode
  — Burst suspend
  — Programmable WAIT configuration
  — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
  — 1.8 V low-power buffered programming at7 µs/byte (Typ)
■ Architecture
  — Asymmetrically-blocked architecture
  — Multiple 8-Mbit partitions: 64-Mbit and 128-Mbit devices
  — Multiple 16-Mbit partitions: 256-Mbit devices
  — Four 16-Kword parameter blocks: top or bottom configurations
  — 64-Kword main blocks
  — Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)
  — Status Register for partition and device status
■ Power
  — VCC (core) = 1.7 V - 2.0 V
  — VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V
  — Standby current: 30 µA (Typ) for 256-Mbit
  — 4-Word synchronous read current: 15 mA (Typ)at 54 MHz
  — Automatic Power Savings mode
■ Security
— OTP space:
• 64 unique factory device identifier bits
• 64 user-programmable OTP bits
• Additional 2048 user-programmable OTP bits
  — Absolute write protection: VPP = GND
  — Power-transition erase/program lockout
  — Individual zero-latency block locking
  — Individual block lock-down
■ Software
  — 20 µs (Typ) program suspend
  — 20 µs (Typ) erase suspend
  — Intel® Flash Data Integrator optimized
  — Basic Command Set (BCS) and Extended Command Set (ECS) compatible
  — Common Flash Interface (CFI) capable
■ Quality and Reliability
  — Expanded temperature: –25° C to +85° C
  — Minimum 100,000 erase cycles per block
  — ETOX™ VIII process technology (0.13 µm)
■ Density and Packaging
  — 64-, 128-, and 256-Mbit density in VF BGA packages
  — 128/0 and 256/0 density in SCSP
  — 16-bit wide data bus

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

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