Complementary silicon highâpower transistors are designed for generalâpurpose power amplifier and switching applications.
Features
⢠Low CollectorâEmitter Saturation Voltage â
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
⢠Low Leakage Current
ICEX = 1.0 mAdc (max) at Rated Voltage
⢠Excellent DC Current Gain â
hFE = 20 (min) at IC = 10 Adc
⢠High Current Gain Bandwidth Product â
f = 4.0 MHz (min) at IC = 1.0 Adc
⢠PbâFree Packages are Available*
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