. . . designed for generalâpurpose amplifier and lowâspeed switching applications.
⢠High DC Current Gain â
hFE = 2000 (Typ) @ IC = 2.0 Adc
⢠CollectorâEmitter Sustaining Voltage â @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) â 2N6035, 2N6038 = 80 Vdc
(Min) â 2N6036, 2N6039
⢠Forward Biased Second Breakdown Current Capability
IS/b = 1.5 Adc @ 25 Vdc
⢠Monolithic Construction with BuiltâIn BaseâEmitter Resistors to
Limit Leakage Multiplication
⢠SpaceâSaving High PerformanceâtoâCost Ratio TOâ225AA Plastic
Package
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