Plastic mediumâpower complementary silicon transistors are designed for generalâpurpose amplifier and lowâspeed switching applications.
Features
⢠High DC Current Gain â hFE = 2500 (Typ) @ IC = 4.0 Adc
⢠CollectorâEmitter Sustaining Voltage â @ 100 mAdc â
VCEO(sus) = 60 Vdc (Min) â 2N6040, 2N6043
= 100 Vdc (Min) â 2N6042, 2N6045
⢠Low CollectorâEmitter Saturation Voltage â
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc â 2N6043,44
= 2.0 Vdc (Max) @ IC = 3.0 Adc â 2N6042, 2N6045
⢠Monolithic Construction with BuiltâIn BaseâEmitter Shunt Resistors
⢠Epoxy Meets UL 94 Vâ0 @ 0.125 in
⢠ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
⢠These Devices are PbâFree and are RoHS Compliant*
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