Description
⢠N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process.
Features
⢠High density cell design for low RDS(ON).
⢠Voltage controlled small signal switching.
⢠Rugged and reliable.
⢠High saturation current capability.
⢠High-speed switcing.
⢠CMOS logic compatible input.
⢠Not thermal runaway.
⢠No secondary breakdown.
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