Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS⢠technology.
Features
â Logic level compatible
â Subminiature surface mount package
â Very fast switching
â Gate-source ESD protection diodes.
Applications
â Relay driver
â High speed line driver.
Quick reference data
â VDS ⤠60 V
â Ptot ⤠0.83 W
â ID ⤠340 mA
â RDSon ⤠3.9 â¦.
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