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2SB1642 Datasheet

Part Name2SB1642 NJSEMI
New Jersey Semiconductor NJSEMI
DescriptionSilicon PNP Power Transistor
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DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= -60V(Min)
• Collector Power Dissipation-
   : Pc= 25 W@ Tc= 25C
• Low Collector Saturation Voltage-
   : VCE(satf -1.5V(Max)@ (lc= -2.5A, IB= -0.25A)

APPLICATIONS
• Designed for audio frequency power amplifier applications.

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