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2SB812 Datasheet - Inchange Semiconductor

2SB812 Datasheet PDF Inchange Semiconductor

Part Name
2SB812

Other PDF
  not available.

page
2 Pages

File Size
82.6 kB

MFG CO.
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
    : V(BR)CEO= -60V(Min)
• High Power Dissipation
• Complement to Type 2SD1032
   
APPLICATIONS
• Designed for AF power amplifier applications
   

Page Link's: 1  2 

Part Name
Description
PDF
MFG CO.
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.

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