DESCRIPTION
2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications.
FEATURES
â High power gain: Gpe ⥠10.7dB
@VCC = 13.5V, PO = 3.5W, f = 175MHz
â TO-39 metal seeled package for high reliability.
â Emitter electrode is connected electrically to the case
APPLICATION
1 to 3 watt power amplifiers in VHF band mobile radio applications.
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