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2SC3072 Datasheet - Toshiba

2SC3072 Datasheet PDF Toshiba

Part Name
2SC3072

Other PDF
  1999   2010  

page
4 Pages

File Size
147 kB

MFG CO.
Toshiba
Toshiba Toshiba

Strobe Flash Applications
Medium Power Amplifier Applications

• High DC current gain
   : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A)
   : hFE = 70 (min) (VCE = 2 V, IC = 4 A)
• Low collector saturation voltage
   : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
• High power dissipation
   : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)

 

Page Link's: 1  2  3  4 

Part Name
Description
PDF
MFG CO.
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
Unspecified
Silicon NPN Epitaxial Type (PCT process) Transistor
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Silicon NPN Epitaxial Type (PCT Process) Transistor
TY Semiconductor
Silicon NPN Epitaxial Type (PCT Process) Transistor
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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
Unspecified
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
Inchange Semiconductor
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
Unspecified
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC

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