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2SC3356WS Datasheet

Part Name Description Manufacturer
2SC3356WS Silicon Epitaxial Planar Transistor BILIN
Galaxy Semi-Conductor BILIN
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2SC3356W image

FEATURES
● Low noise and high gain: NF=1.1dB TYP,
   Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz
● High power gain:MAG=13dB TYP.
   @VCE=10V.IC=20mA,f=1.0GHz
  
APPLICATIONS
● NPN Silicon Epitaxial Planar Transistor.

 

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