Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site


2SC3603 Datasheet

Part Name2SC3603 NEC
NEC => Renesas Technology NEC
DescriptionNPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
PDF DOWNLOAD     


2SC3603 image

The 2SC3603 is an NPN epitaxial transistor designed for low noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES
• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
• High power gain : GA = 10 dB TYP. @ f = 2.0 GHz

 

Page Links : 1  2  3  4  5  6  7  8 
Share Link : 

HOME '2SC3603' Search


Language : 한국어     日本語     русский     简体中文     español
@ 2015 - 2018  [ Home  ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]