2SC3603 Datasheet - NEC => Renesas Technology
Part Name
2SC3603
Other PDF
not available.
PDF
page
8 Pages
File Size
77.9 kB
MFG CO.
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.
FEATURES
⢠Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
⢠High power gain : GA = 10 dB TYP. @ f = 2.0 GHz
|
|
Part Name
Description
PDF
MFG CO.
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
New Jersey Semiconductor
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
eleflow technologies co., ltd.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
California Eastern Laboratories.
Microwave Low Noise Amplifier NPN Silicon Epitaxial Planar Transistor
Cystech Electonics Corp.
Microwave Low Noise Amplifier NPN Silicon Epitaxial Planar Transistor
Cystech Electonics Corp.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
California Eastern Laboratories.
Share Link: