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2SC4781 Datasheet

Part Name2SC4781 Toshiba
Toshiba Toshiba
DescriptionTOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
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Strobe Flash Applications
Medium Power Amplifier Applications

• High DC current gain and Excellent hFE linearity
   : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A)
   : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 80 mA)

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