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2SD1047 Datasheet - STMicroelectronics

2SD1047 Datasheet PDF STMicroelectronics

Part Name
2SD1047

Description
High power NPN epitaxial planar bipolar transistor

Other PDF
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PDF
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page
10 Pages

File Size
169.2 kB

MFG CO.
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Features
■ High breakdown voltage VCEO = 140 V
■ Typical ft = 20 MHz
■ Fully characterized at 125 °C

Application
■ Power supply

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

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