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|Description||NPN Epitaxial Planar Silicon Transistor|
● Less power dissipation because of low VCE(sat),
permitting more flashes of light to be emitted.
● Large current capacity and highly resistant to breakdown.
● Excellent linearity of hFE in the region from low
current to high current.
● Ultrasmall size supports high-density, ultrasmallsized
hybrid IC designs.
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