DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

2SJ200Y Datasheet - Toshiba

2SJ200Y Datasheet PDF Toshiba

Part Name
2SJ200Y

Other PDF
  not available.

page
5 Pages

File Size
421.5 kB

MFG CO.
Toshiba
Toshiba Toshiba

High Power Amplifier Application

• High breakdown voltage : VDSS = −180 V
• High forward transfer admittance : |Yfs| = 4.0 S (typ.)
• Complementary to 2SK1529


Part Name
Description
PDF
MFG CO.
P-channel MOS type silicon field effect transistor
SANYO -> Panasonic
P-Channel MOS Type Silicon Field Effect Transistor
SANYO -> Panasonic
P channel MOS type field effect transistor ( Rev : V2 )
SANYO -> Panasonic
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2−Π−MOSV)
Unspecified
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
Unspecified
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
NEC => Renesas Technology
P CHANNEL MOS FIELD EFFECT TRANSISTOR
KEC
P CHANNEL MOS FIELD EFFECT TRANSISTOR
KEC
P CHANNEL MOS FIELD EFFECT TRANSISTOR ( Rev : 2003 )
KEC
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
Unspecified

Share Link: 

All Rights Reserved© datasheetq.com  [Privacy Policy ] [ Request Datasheet] [Contact Us]