2SJ201-O Datasheet PDF

2SJ201-O Datasheet - Toshiba

Part Name

2SJ201-O

Description

Silicon P Channel MOS Type Field Effect Transistor

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page

5 Pages

File Size

264 kB

MFG CO.

Toshiba

High-Power Amplifier Application

High breakdown voltage : VDSS= −200 V
High forward transfer admittance : |Yfs| = 5.0 S (typ.)
Complementary to 2SK1530

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