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2SJ313 Datasheet

Part Name2SJ313 Toshiba
Toshiba Toshiba
DescriptionTOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Other Doc.  2006  
2SJ313 image

Audio Frequency Power Amplifier Application

● High breakdown voltage: VDSS = −180 V
● High forward transfer admittance: |Yfs| = 0.7 S (typ.)
● Complementary to 2SK2013

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