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2SJ315 Datasheet

Part Name2SJ315 Toshiba
Toshiba Toshiba
DescriptionTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
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2SJ315 image

DC−DC Converter

FEATURES
● 4− Volt gate drive
● Low drain−source ON resistance : RDS (ON) = 0.25 Ω (typ.)
● High forward transfer admittance : |Yfs| = 3.0 S (typ.)
● Low leakage current : IDSS = −100 µA (max) (VDS = −60 V)
● Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)

 

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