DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

2SK2365-S Datasheet - NEC => Renesas Technology

2SK2365-S Datasheet PDF NEC => Renesas Technology

Part Name
2SK2365-S

Other PDF
  not available.

page
8 Pages

File Size
96.2 kB

MFG CO.
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

FEATURES
• Low On-Resistance
    2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A)
    2SK2366: RDS(on) = 0.6 Ω (VGS = 10 V, ID = 5.0 A)
• Low Ciss Ciss = 1 600 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package

Page Link's: 1  2  3  4  5  6  7  8 

Part Name
Description
PDF
MFG CO.
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics

Share Link: 

All Rights Reserved© datasheetq.com  [Privacy Policy ] [ Request Datasheet] [Contact Us]