DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

2SK2512 Datasheet - NEC => Renesas Technology

2SK2512 Datasheet PDF NEC => Renesas Technology

Part Name
2SK2512

Other PDF
  not available.

page
8 Pages

File Size
71.6 kB

MFG CO.
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES
• Low On-Resistance
   RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A)
   RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A)
• Low Ciss Ciss = 2 100 pF TYP.
• Built-in G-S Protection Diode


Part Name
Description
PDF
MFG CO.
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics

Share Link: 

All Rights Reserved© datasheetq.com  [Privacy Policy ] [ Request Datasheet] [Contact Us]