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2SK3113 Datasheet

Part Name Description Manufacturer
2SK3113 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE TYSEMI
TY Semiconductor TYSEMI
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2SK3113 image

Features
Low on-state resistance RDS(on)=4.4Ω MAX. (VGS=10V,ID=1.0A)
Low gate charge
  QG= 9 nC TYP. (VDD=450V,VGS=10V,ID=2.0A)
Gate voltage rating ±30 V
Avalanche capability ratings

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