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2SK3307 Datasheet - NEC => Renesas Technology

2SK3307 Datasheet PDF NEC => Renesas Technology

Part Name
2SK3307

Other PDF
  not available.

page
8 Pages

File Size
61 kB

MFG CO.
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES
• Super low on-state resistance:
   RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A)
   RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
• Low Ciss: Ciss = 4650 pF TYP.
• Built-in gate protection diode

Page Link's: 1  2  3  4  5  6  7  8 

Part Name
Description
PDF
MFG CO.
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics

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