DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23and 4N24’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN,JANS, JANTX and JANTXV quality levels.

Features:
• Overall current gain...1.5 typical (4N24)
• Base lead provided for conventional transistor biasing
• Rugged package
• High gain, high voltage transistor
• +1kV electrical isolation

Applications:
• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
•Motor control