The4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
infraredemitting diode optically coupled to amonolithic silicon phototransistor
detector.
• Most Economical Optoisolator Choice for Medium Speed, Switching Applications
• Meets or Exceeds All JEDEC Registered Specifications
Applications
• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• I/O Interfacing
• Solid State Relays
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