General Description
The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
Features
â High voltage:
â MOC8204M, BVCER = 400V
â H11D1M, H11D2M, BVCER = 300V
â H11D3M, BVCER = 200V
â High isolation voltage:
â 7500 VAC peak, 1 second
â Underwriters Laboratory (UL) recognized File # E90700, Volume 2
â IEC 60747-5-2 approved (ordering option V)
Applications
â Power supply regulators
â Digital logic inputs
â Microprocessor inputs
â Appliance sensor systems
â Industrial controls
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