description
These devices consist of bus transceiver circuits, D-type flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the data bus or from the internal storage registers.
   
• State-of-the-Art BiCMOS Design
    Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per
    MIL-STD-883C, Method 3015; Exceeds
    200 V Using Machine Model (C = 200 pF,
    R = 0)
• Independent Registers and Enables for
    A and B Buses
• Multiplexed Real-Time and Stored Data
• Power-Up High-Impedance Mode
• Package Options Include Plastic
    Small-Outline (DW) Packages, Ceramic
    Chip Carriers (FK) and Flatpacks (W), and
    Standard Plastic and Ceramic 300-mil DIPs
    (JT, NT)