Description
The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor.
The devices are packaged in an 8-pin DIP package and available in wide-lead spacing and SMD option.
Features
⢠High speed 1Mbit/s
⢠High isolation voltage between input and output (Viso=5000 Vrms )
⢠Guaranteed performance from 0°C to 70°C
⢠Wide operating temperature range of -55°C to 100°C
⢠Pb free and RoHS compliant
⢠UL approved (No. 214129)
⢠VDE approved (No. 132249)
⢠SEMKO approved
⢠NEMKO approved
⢠DEMKO approved
⢠FIMKO approved
⢠CSA approved (No. 2037145)
Applications
⢠Line receivers
⢠Telecommunication equipments
⢠Power transistor isolation in motor drives
⢠Replacement for low speed phototransistor photo couplers
⢠Feedback loop in switch-mode power supplies
⢠Home appliances
⢠High speed logic ground isolation
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