[CT Micro International Corporation]
Description
The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor.
The devices are packaged in an 8-pin DIP package and also available in gullwing (400mil) and surface mount lead forming.
Features
⢠High speed 1MBit/s
⢠High isolation voltage between input and output (Viso=5000 Vrms )
⢠Guaranteed CTR performance from 0°C to 70°C
⢠Wide operating temperature range of -55°C to 100°C
⢠Regulatory Approvals
â UL - UL1577 (E364000)
â VDE - EN60747-5-5(VDE0884-5)
â CQC â GB4943.1, GB8898
â IEC60065, IEC60950
Applications
⢠Line receivers
⢠Telecommunication equipment
⢠High speed logic ground isolation
⢠Feedback loop in switch-mode power supplies
⢠Home appliances
|