DESCRIPTION
The V2G00 is an advanced high-speed CMOS SINGLE 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
â HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V
â LOW POWER DISSIPATION:
ICC = 1µA(MAX.) at TA = 25°C
â HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.)
â POWER DOWN PROTECTION ON INPUTS
â SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 8mA (MIN)
â BALANCED PROPAGATION DELAYS:
tPLH â
tPHL
â OPERATING VOLTAGE RANGE:
VCC(OPR) = 2V to 5.5V
â IMPROVED LATCH-UP IMMUNITY
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